transistors 1 publication date: december 2002 sjc00211bed 2sd1205, 2SD1205A silicon npn epitaxial planar type darlington for low-frequency amplification features ? forward current transfer ratio h fe is designed high, which is appro- priate to the driver circuit of motors and printer hammer: h fe = 4 000 to 20 000. ? a shunt resistor is omitted from the driver. ? m type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. absolute maximum ratings t a = 25 c electrical characteristics t a = 25 c 3 c 6.9 0.1 2.5 0.1 (1.0) (1.0) (1.5) (0.85) 0.45 0.05 0.55 0.1 (2.5) (2.5) 21 3 r 0.7 r 0.9 (0.4) 3.5 0.1 4.5 0.1 4.1 0.2 2.4 0.2 1.25 0.05 2.0 0.2 1.0 0.1 (1.5) unit: mm 1: base 2: collector 3: emitter m-a1 package note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * 1: pulse measurement * 2: rank classification rank q r h fe 4 000 to 10 000 8 000 to 20 000 parameter symbol rating unit collector-base voltage 2sd1205 v cbo 30 v (emitter open) 2SD1205A 60 collector-emitter voltage 2sd1205 v ceo 25 v (base open) 2SD1205A 50 emitter-base voltage (collector open) v ebo 5v collector current i c 500 ma peak collector current i cp 750 ma collector power dissipation p c 400 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-base voltage 2sd1205 v cbo i c = 100 a, i e = 030 v (emitter open) 2SD1205A 60 collector-emitter voltage 2sd1205 v ceo i c = 1 ma, i b = 025v (base open) 2SD1205A 50 emitter-base voltage (collector open) v ebo i e = 100 a, i c = 05 v collector-base cutoff current (emitter open) i cbo v cb = 25 v, i e = 0 100 na emitter-base cutoff current (collector open) i ebo v eb = 4 v, i c = 0 100 na forward current transfer ratio * 1, 2 h fe v ce = 10 v, i c = 500 ma 4 000 20 000 ? collector-emitter saturation voltage * 1 v ce(sat) i c = 500 ma, i b = 0.5 ma 2.5 v base-emitter saturation voltage * 1 v be(sat) i c = 500 ma, i b = 0.5 ma 3 v transition frequency f t v cb = 10 v, i e = ? 50 ma, f = 200 mhz 150 mhz internal connection b c e 200 ?
2sd1205, 2SD1205A 2 sjc00211bed h fe ? i c c ob ? v cb p c ? t a v ce(sat) ? i c v be(sat) ? i c 0 160 40 120 80 140 20 100 60 0 500 400 300 200 100 collector power dissipation p c ( mw ) ambient temperature t a ( c ) 0.01 0.1 1 10 0.01 0.1 1 10 100 i c / i b = 1 000 25 c ? 25 c t a = 75 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.01 0.1 1 10 100 i c / i b = 1 000 t a = ? 25 c 25 c 75 c base-emitter saturation voltage v be(sat) ( v ) collector current i c ( a ) 0.01 0.1 1 10 10 100 1 000 10 000 100 000 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( a ) 1 10 100 0 8 6 2 5 7 4 1 3 i e = 0 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf)
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. it neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) the products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2002 jul
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